02-06-2012 About Release

Toshiba's Enterprise SSDs Won Director-General's Prize, The Agency for Natural Resources and Energy of Grand Prize for Excellence in Energy Efficiency and Conservation

01-06-2012 Business Press release

Toshiba to launch SLC NAND flash memory embedded ECC

11-16-2011 About Press release

Toshiba Develops Circuit Techniques for Embedded SRAM Operating at 0.5V-1.0V

10-05-2011 About Press release

Two manufacturing companies of HDD and SSD in Philippines to be unified into one company

09-01-2011 Personal Press release

Toshiba to Launch FlashAir™, the World's First SDHC Memory Card with Embedded Wireless LAN Communications

07-13-2011 About Press release

Hynix and Toshiba Sign Joint Development for MRAM

07-12-2011 About Press release

Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan

06-23-2011 About Press release

Toshiba reinforces storage device business by re-forming development and sales

04-21-2011 About Press release

Toshiba launches 19nm process NAND flash memory

04-06-2011 About Press release

Toshiba introduces new embedded-NAND flash memory in 24nm process

09-02-2010 Personal Press release

Toshiba to Launch the World's Fastest SDHC Memory Card

08-31-2010 About Press release

Toshiba launches 24nm process NAND flash memory

07-22-2010 About Press release

Samsung and Toshiba to Support New Standardized NAND Specification for High-performance Applications

07-14-2010 About Press release

Toshiba Starts Construction of Fab 5 for NAND Flash Memory at Yokkaichi

06-22-2010 About Press release

Toshiba and Trek Establish Forum to Promote SD Cards Embedding Wireless Communication Functions

06-17-2010 Business Press release

Toshiba Launches Industry's Largest Embedded NAND Flash Memory Modules

02-03-2010 About Press release

Toshiba to strengthen memory back-end process development capabilities

01-07-2010 Business Press release

Toshiba to enhance line-up of 32nm multi-level cell SSDs.

01-07-2010 About Press release

Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology

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